Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Patent
1996-06-27
1998-03-10
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
257470, 257659, H01L 31058
Patent
active
057264813
ABSTRACT:
A power semiconductor device (e.g. MOSFET or IGBT) has a temperature sensing means in the form of thin-film sensing element (D1) on a first insulating layer (2) on the device body (10). The sensing element is preferably a reverse-biased p-n junction thin-film polycrystalline silicon diode (D1). In order to screen the sensitive element (D1) from electrical noise, an electrically conductive layer (4) is present on a second electrically insulating layer (5) over the thin-film element (D1) and forms part of an electrical screen (3,4) which is present over and under the thin-film element (D1). This electrical screen (3,4) also comprises a semiconductive region (3) underlying the thin-film element (D1), with the overlying conductive layer (4) electrically connected to the semiconductive region (3) at a window (6) in the insulating layers (2,5). One electrical connection of the thin-film element (D1) may be formed by the screening conductive layer (4) extending through a contact window (46) in the second insulating layer (5) and connected to a stable reference potential (e.g. ground). The electrical screen (3,4) can be integrated around the thin-film element (D1) in the same process steps as are already used for power device fabrication, but with modified mask layouts for providing the desired geometry in accordance with the invention. The overlying screening conductive layer (4) may be a main electrode (e.g. source) of the power semiconductor device.
REFERENCES:
patent: 4984200 (1991-01-01), Saitoo
patent: 5050238 (1991-09-01), Tomizuka
IEEE Elec. Dev Lett. vol. 16 No. 9 Sep. 1995 Iwamuro et al. "A New Vertical IGBT . . . Circuit".
Biren Steven R.
Jackson Jerome
U.S. Philips Corporation
LandOfFree
Power semiconductor device having a temperature sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power semiconductor device having a temperature sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor device having a temperature sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-142040