Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2005-05-06
2008-09-02
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S386000, C257S394000, C257SE29006, C257SE29018, C257SE29019
Reexamination Certificate
active
07420260
ABSTRACT:
A power semiconductor device has a first region in which a transistor is formed, a third region in which a control element is formed, and a second region for separating the first region and the third region. The power semiconductor device includes a substrate of a first conductive type and a semiconductor region of a second conductive type arranged on the substrate, and a highly-doped buried layer of the second conductive type and a highly-doped bottom layer of the first conductive type are arranged between the substrate and the semiconductor region, and the first highly-doped bottom layer of the first conductive type is arranged on a top side and a bottom side of the highly-doped buried layer in the first region and extends by a predetermined distance to the second region, and a first isolation region is arranged on the highly-doped bottom layer extending from the first region in the second region, and a highly-doped region of the second conductive type is arranged on the highly-doped buried layer, and a second isolation region is arranged on a second highly-doped bottom layer of the first conductive type. By such structure, parasitic bipolar junction transistors in the first isolation region and the second isolation region can be electrically separated from the third region.
REFERENCES:
patent: 5541123 (1996-07-01), Williams et al.
patent: 5541125 (1996-07-01), Williams et al.
patent: 5547880 (1996-08-01), Williams et al.
patent: 5559044 (1996-09-01), Williams et al.
patent: 5583061 (1996-12-01), Williams et al.
patent: 5618743 (1997-04-01), Williams et al.
patent: 5643820 (1997-07-01), Williams et al.
patent: 5648281 (1997-07-01), Williams et al.
patent: 5973366 (1999-10-01), Tada
Jeong Young-sub
Kim Cheol-joong
Kwon Tae-hun
Fairchild Korea Semiconductor Ltd.
Ho Hoang-Quan
Huynh Andy
Sidley Austin LLP
LandOfFree
Power semiconductor device for suppressing substrate... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power semiconductor device for suppressing substrate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor device for suppressing substrate... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3989344