Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With housing mount
Reexamination Certificate
2011-03-01
2011-03-01
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With housing mount
C257S685000, C257S777000, C257S784000, C257S786000, C257SE25006, C257SE21614, C257SE23085
Reexamination Certificate
active
07898080
ABSTRACT:
A power semiconductor device has a power field effect transistors connected in a bridge circuit (16), parallel circuit or series circuit (18), the power semiconductor device (30) having a base power semiconductor chip (1) with large-area external contacts (S1, D1) on the top side (31) and rear side (32) and carrying at least one stacked power semiconductor chip (2). The stacked power semiconductor chip (2) is surface-mounted with at least one large-area external electrode (D2) on a correspondingly large-area external electrode (S1) of the top side (31) of the base power semiconductor chip (1). At least one metallic structured spacer (33) is arranged between the surface-mounted external electrodes (S1, D2) of the base power semiconductor chip (1) and the stacked power semiconductor chip (2). The structure of the spacer (33) has at least one cutout (34) for a non-surface-mountable connecting element (35) of the base power semiconductor chip (1).
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Banner & Witcoff , Ltd.
Infineon - Technologies AG
Monbleau Davienne
Rodela Eduardo A
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