Power semiconductor device and method for its production

Details Power semiconductor device and method for its production Power semiconductor device and method for its production

2011-05-24

2011-05-24

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including adhesive bonding step

C438S119000, C438S598000, C438S624000, C257S678000, C257S700000

Reexamination Certificate

active

07947532

ABSTRACT:
A power semiconductor device and a method for its production. The power semiconductor device has at least one power semiconductor chip, which has on its top side and on its back side large-area electrodes. The electrodes are electrically in connection with external contacts by means of connecting elements, the power semiconductor chip and the connecting elements being embedded in a plastic package. This plastic package has a number of layers of plastic, which are pressed one on top of the other and have plane-parallel upper sides. The connecting elements are arranged on at least one of the plane-parallel upper sides, between the layers of plastic pressed one on top of the other, as a patterned metal layer and are electrically in connection with the external contacts by means of contact vias through at least one of the layers of plastic.

REFERENCES:
patent: 2007/0246808 (2007-10-01), Ewe et al.

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