1987-05-04
1989-11-21
Hille, Rolf
H01L 2342
Patent
active
048826120
ABSTRACT:
In a power semiconductor device according to the present invention, a sheet, formed of a soft metal such as Ag, is provided on that portion of a pressing control electrode which is brought into contact with an Al gate electrode of a pellet. By means of this sheet, it is possible both to apply a strong pressing power to the Al gate electrode and to reduce the contact resistance between the two electrode. Since an excessive amount of heat is not produced on account of the contact resistance, the semiconductor device can be protected against being damaged.
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Fujiwara Takashi
Okamura Hiroshi
Uetake Yoshinari
Usui Yasunori
Hille Rolf
Kabushiki Kaisha Toshiba
Loke Steven H. Y.
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