Power semiconductor device

Details Power semiconductor device Power semiconductor device

1984-12-21

1987-03-24

Edlow, Martin H.

357 2313, 357 41, 357 39, 357 86, H01L 2702

Patent

active

046529020

ABSTRACT:
The present invention comprises a power semiconductor device in which a bipolar transistor and a diode are formed in antiparallel in a semiconductor chip with an emitter electrode (21) on one surface of the transistor (16) serving also as an anode electrode of the diode and a collector electrode (23) on another surface of the transistor serving also as a cathode electrode of the diode. A plurality of emitter lead wires (24) of the power transistor serving also as anode lead wires of the diode are connected in the anode region of the diode. Thus, electric current is made to flow from the anode region of the diode to the cathode thereof if a short circuit occurs, so that the lead wires can be prevented from being melted by large current.

REFERENCES:
patent: 3636385 (1972-01-01), Koepp
patent: 3947864 (1976-03-01), Yatsuo et al.
patent: 3978514 (1976-08-01), Ogawa et al.
patent: 4521795 (1985-06-01), Coe et al.
patent: 4530000 (1985-07-01), van de Wouw et al.
Motorola, Inc., The Semiconductor Data Book, 2nd ed., 1966, pp. 16-104.

Affiliated with

Also associated with

Rating

Power semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1357033