Power semiconductor device

Details Power semiconductor device Power semiconductor device

2008-01-16

2010-10-19

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

C257S104000, C257S146000, C257S153000, C257S170000, C257SE21388, C257SE29211, C257SE29213, C438S133000, C438S350000, C438S530000

Reexamination Certificate

active

07816706

ABSTRACT:
The power semiconductor device with a four-layer npnp structure can be turned-off via a gate electrode. The first base layer comprises a cathode base region adjacent to the cathode region and a gate base region adjacent to the gate electrode, but disposed at a distance from the cathode region. The gate base region has the same nominal doping density as the cathode base region in at least one first depth, the first depth being given as a perpendicular distance from the side of the cathode region, which is opposite the cathode metallization. The gate base region has a higher doping density than the cathode base region and/or the gate base region has a greater depth than the cathode base region in order to modulate the field in blocking state and to defocus generated holes from the cathode when driven into dynamic avalanche.

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International Search Report dated Sep. 21, 2006.
English translation of Office Action dated Mar. 27, 2009 issued in corresponding Chinese Patent Application No. 200680026776.4.

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