Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2009-04-21
2010-12-28
Thai, Luan C (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S691000, C257S341000, C257S723000, C257S401000, C257S342000, C257S343000, C257SE23079
Reexamination Certificate
active
07859079
ABSTRACT:
The present invention relates to a power semiconductor device comprising a switching power semiconductor element, and a free wheeling diode in anti-parallel connection to the switching power semiconductor element. The power semiconductor is characterized in that a reverse electrode of the switching power semiconductor element and a reverse electrode of the free wheeling diode are bonded and mounted on a circuit pattern formed on the main surface of the first substrate, and that a circuit pattern, which is so formed on the main surface of the second substrate as to oppose a surface electrode of the switching power semiconductor element and a surface electrode of the free wheeling diode, is connected to the surface electrodes of the switching power semiconductor element and the free wheeling diode through connective conductors to be soldered, respectively.
REFERENCES:
patent: 4646129 (1987-02-01), Yerman et al.
patent: 5559374 (1996-09-01), Ohta et al.
patent: 5786636 (1998-07-01), Takahashi
patent: 5945730 (1999-08-01), Sicard et al.
patent: 6072240 (2000-06-01), Kimura et al.
patent: 6144101 (2000-11-01), Akram
patent: 6274451 (2001-08-01), Changey et al.
patent: 6278179 (2001-08-01), Mermet-Guyennet
patent: 6297079 (2001-10-01), Changey et al.
patent: 6306680 (2001-10-01), Fillion et al.
patent: 6324072 (2001-11-01), Lorenz et al.
patent: 6344686 (2002-02-01), Schaeffer et al.
patent: 6350954 (2002-02-01), Specks et al.
patent: 6589859 (2003-07-01), Petitbon et al.
patent: 6703707 (2004-03-01), Mamitsu et al.
patent: 2002/0006685 (2002-01-01), Petitbon et al.
patent: 2003/0106924 (2003-06-01), Nobori et al.
patent: 102 58 565 (2004-08-01), None
patent: 1 104 024 (2001-05-01), None
patent: 2 814 907 (2002-04-01), None
patent: 2 334 143 (1999-08-01), None
patent: 62-72147 (1987-04-01), None
patent: 6-302734 (1994-10-01), None
patent: 8-8395 (1996-01-01), None
patent: 8-17972 (1996-01-01), None
patent: 9-283887 (1997-10-01), None
patent: 10-56131 (1998-02-01), None
patent: 10-233509 (1998-09-01), None
patent: 2001-291823 (2001-10-01), None
patent: 2002-16215 (2002-01-01), None
patent: 2002-76254 (2002-03-01), None
patent: 2003-243608 (2003-08-01), None
Search Report from the French Patent Office dated Oct. 26, 2006.
Arai Kiyoshi
Boursat Benoit
Dutarde Emmanuel
Kondou Makoto
Lasserre Philippe
Alstom Transport SA
McDermott Will & Emery LLP
Mitsubishi Denki & Kabushiki Kaisha
Thai Luan C
LandOfFree
Power semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4180738