Power semiconductor device

Details Power semiconductor device Power semiconductor device

1995-08-07

2000-07-25

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

257590, H01L 29167

Patent

active

060939559

ABSTRACT:
A semiconductor device having two or more p-n junctions, being in particular a bipolar transistor or a thyristor. The device has an gold ion implant in a region of the device between two of or the two p-n junctions, which region is the base in the case of a bipolar transistor, located away from the current carrying active region of the device. The device has a low resistance and may be turned off rapidly because the implanted gold provides recombination centers which act as a sink for carriers drawing them from the active region.

REFERENCES:
patent: 4259683 (1981-03-01), Adler et al.
patent: 4754315 (1988-06-01), Fisher et al.
patent: 5343068 (1994-08-01), Frisina et al.
Patent Abstracts of Japan, vol. 8 No. 185, (E-262) [1622], Aug. 24, 1984, Thyristor, Nippon Denki K.K.

Affiliated with

Also associated with

Rating

Power semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1338396