Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-06-26
2007-06-26
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S077000, C257S369000, C257S371000, C257S512000
Reexamination Certificate
active
10467344
ABSTRACT:
A semiconductor device is provided in which a plurality of MOSFETs including a vertical MOSFET is formed on a substrate. The device includes a silicon carbide substrate having front and back surfaces facing each other, an isolating region formed in the substrate to extend from the front surface to the back surface of the substrate, and first and second MOSFETs formed on opposite sides of the isolating region, respectively.
REFERENCES:
patent: 5241211 (1993-08-01), Tashiro
patent: 5614743 (1997-03-01), Mochizuki
patent: 5661329 (1997-08-01), Hiramoto et al.
patent: 5763922 (1998-06-01), Chau
patent: 5977564 (1999-11-01), Kobayashi et al.
patent: 5985708 (1999-11-01), Nakagawa et al.
patent: 6133587 (2000-10-01), Takeuchi et al.
patent: 6150708 (2000-11-01), Gardner et al.
patent: 6310385 (2001-10-01), Ajit
patent: 6392859 (2002-05-01), Ohshima
patent: 6423987 (2002-07-01), Constapel et al.
patent: 6518144 (2003-02-01), Minato et al.
patent: 6642599 (2003-11-01), Watabe et al.
patent: 2001/0045615 (2001-11-01), Ajit
patent: 2002/0040994 (2002-04-01), Nitta et al.
patent: 2003/0104681 (2003-06-01), Davari et al.
patent: 2005/0006716 (2005-01-01), Kumar et al.
patent: 2006/0102960 (2006-05-01), Masleid
patent: 887854 (1998-12-01), None
patent: 6-100469 (1985-06-01), None
patent: 1-253265 (1989-10-01), None
patent: 8-88283 (1996-04-01), None
patent: 11177082 (1999-07-01), None
patent: 2002-314082 (2002-10-01), None
Hatae Shinji
Majumdar Gourab
Yamamoto Akihisa
Mitsubishi Denki & Kabushiki Kaisha
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Purvis Sue A.
Sefer Ahmed N.
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