Power semiconductor device

Details Power semiconductor device Power semiconductor device

1994-01-19

1996-09-10

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257133, 257138, 257146, 257163, 257331, 257332, 257378, H01L 2974, H01L 31111

Patent

active

055548628

ABSTRACT:
In a power semiconductor device, an n-base is formed on a p-emitter layer. On the n-base layer, a p-base layer, an n-emitter layer, and a high-concentration p-layer are formed laterally. In the p-base layer, an n-source layer is formed a specified distance apart from the n-emitter layer. In the n-emitter layer, a p-source layer is formed a specified distance apart from the high-concentration p-layer. A first gate electrode is formed via a first gate insulating film on the region sandwiched by the n-source layer and the n-emitter layer. A second gate electrode is formed via a second gate insulating film on the region sandwiched by the high-concentration p-layer and the p-source layer. On the p-emitter layer, a first main electrode is formed. A second main electrode is formed so as to be in contact with the p-base layer, the n-source layer, and the p-source layer.

REFERENCES:
patent: 5304821 (1994-04-01), Hagino
patent: 5329142 (1994-07-01), Kitagawa et al.

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