Power semiconductor device

Details Power semiconductor device Power semiconductor device

2007-07-10

2007-07-10

Sircus, Brian (Department: 2836)

Electrical transmission or interconnection systems

Switching systems

Condition responsive

C361S103000, C361S093800

Reexamination Certificate

active

10686616

ABSTRACT:
A power semiconductor device which makes a heat come hard to arise in a particular element and is able to control an increase of the amount of a power loss caused by a tail current, even in case that plural power semiconductor elements are connected in parallel is provided.A control part (CTa) performs a regional control instead of a general control that all of IGBT elements (PD1to PD4) are made to operate identically with providing a PWM signal (S0) for all of the elements. In other words, when a certain pulse in a pulse row of the PWM signal (S0) is inputted, only a part of switches (SW1and SW2) is turned on and only a part of the IGBT elements (PD1and PD2) is made to operate, and when a next pulse is inputted, only the other part of switches (SW3and SW4) is turned on and only the other part of IGBT elements (PD3and PD4) is made to operate. Moreover, the operation described above is repeated.

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