Power semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S143000

Reexamination Certificate

active

11194593

ABSTRACT:
A power semiconductor device comprises a semiconductor substrate, a gate electrode region (control electrode region), a cathode electrode region (first main electrode region), an anode electrode region (second main electrode region) and a guard ring. The semiconductor substrate has a side surface portion having a vertical portion formed substantially vertical to a main surface and a mesa portion connected to the vertical portion in a cross section. The gate electrode region is formed in a first main surface of the semiconductor substrate. The cathode electrode region is formed in part of a surface of the gate electrode region. The anode electrode region is formed in a second main surface of the semiconductor substrate. The guard ring is formed in the second main surface of the semiconductor substrate and annularly surrounds the anode electrode region. With this constitution provided is a power semiconductor device which makes the impurity diffusion length of the anode electrode region shallower in order to ensure reduction in recovery loss.

REFERENCES:
patent: 5140406 (1992-08-01), Matsuda et al.
patent: 5393995 (1995-02-01), Nakagawa et al.
patent: 5-343662 (1993-12-01), None
patent: 10-190012 (1998-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Power semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3759627

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.