Power semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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Details

C257SE23010

Reexamination Certificate

active

07087990

ABSTRACT:
A power semiconductor device to which a large current can be applied and which can be fabricated compactly in a shorter time, including an electrode structure for taking out electrodes from a power semiconductor element mounted on one of a plurality of circuit patterns formed on an insulating substrate inside of a case up to an external-connection terminal exposed outside of the case, and an external-connection terminal insert-formed on the body of the case, exposed to the outside of the case at one end of the terminal and having a junction portion at its other end joined to a circuit pattern different from the circuit pattern on which the power semiconductor element is mounted. The junction portion is directly connected with the power semiconductor element through a wire member bonded to the face opposite to the junction face of the terminal.

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patent: 5585672 (1996-12-01), Koike et al.
patent: 6255585 (2001-07-01), Jones et al.
patent: 6320258 (2001-11-01), Mangiagli et al.
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patent: 08306859 (1996-11-01), None

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