Power semiconductor device

Details Power semiconductor device Power semiconductor device

2006-07-11

2006-07-11

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S488000

Reexamination Certificate

active

07075125

ABSTRACT:
A power semiconductor device includes a first semiconductor layer of non-doped AlXGa1−XN (0≦X≦1), and a second semiconductor layer of non-doped or n-type AlYGa1−YN (0≦Y≦1, X<Y) disposed on the first semiconductor layer. Source and drain electrodes are disposed separately from each other, and electrically connected to the second semiconductor layer. A gate electrode is disposed on the second semiconductor layer between the source and drain electrodes. An insulating film covers the second semiconductor layer between the gate and drain electrodes. A first field plate electrode is disposed on the insulating film and electrically connected to the gate electrode. A second field plate electrode is disposed on the insulating film and electrically connected to the source electrode.

REFERENCES:
patent: 4727404 (1988-02-01), Boccon-Gibod
patent: 6100571 (2000-08-01), Mizuta et al.
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 6483135 (2002-11-01), Mizuta et al.
patent: 6555851 (2003-04-01), Morizuka
patent: 6689652 (2004-02-01), Morizuka
patent: 2005/0062069 (2005-03-01), Saito et al.
patent: 2001-237250 (2001-08-01), None
patent: 2002-118122 (2002-04-01), None

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