Power semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Reexamination Certificate

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Details

C257S136000, C257S302000, C257S328000, C257S329000, C257S330000

Reexamination Certificate

active

06849880

ABSTRACT:
A power semiconductor device includes second layers of a second conductivity type disposed in a first layer of a first conductivity type. The second layers extend in a depth direction and are arrayed at intervals. Third layers of the second conductivity type are disposed respectively in contact with the second layers. Fourth layers of the first conductivity type are respectively formed in surfaces of the third layers. A gate electrode faces, through a first insulating film, a channel region, which is each of portions of the third layers interposed between the fourth layers and the first layer. An additional electrode is disposed on each of the second layers through a second insulating film, and faces, through each of the second layers, the first main electrode. The additional electrode is electrically connected to the gate electrode.

REFERENCES:
patent: 5216275 (1993-06-01), Chen
patent: 5438215 (1995-08-01), Tihanyi
patent: 6081009 (2000-06-01), Neilson
U.S. patent application Ser. No. 10/183,457, Saitoh et al., filed Jun. 28, 2002.
U.S. patent application Ser. No. 10/354,048, Yamaguchi et al., filed Jan. 30, 2003.
U.S. patent application Ser. No. 10/463,613, Saito et al., filed Jun. 18, 2003.

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