Power semiconductor device

Details Power semiconductor device Power semiconductor device

2005-03-22

2005-03-22

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C361S611000, C361S624000, C361S639000

Reexamination Certificate

active

06870253

ABSTRACT:
Emitter electrodes (Es) and collector electrodes (Cs) of elements (101to104) are connected to bus electrodes (361to364) of a bus bar (351), respectively. The bus bar (351) contains seven layers including four insulating layers (not shown) and three conductive layers (shown) interposed between the insulating layers. Namely, each of the bus electrodes (361to364) is connected to one of the conductive layers corresponding to one of a positive electrode (P), a negative electrode (N) and an intermediate electrode (L). The collector electrodes (Cs) of the elements (103and104) are connected one over the other to the bus electrode (361). The emitter electrodes (Es) of the elements (103and104) are connected one over the other to the bus electrode (362). The collector electrodes (Cs) of the elements (101and102) are connected one over the other to the bus electrode (363). The emitter electrodes (Es) of the elements (101and102) are connected one over the other to the bus electrode (364).

REFERENCES:
patent: 10-209197 (1998-08-01), None
patent: 11-299239 (1999-10-01), None
patent: 2000-23462 (2000-01-01), None

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