Power semiconductor device

Details Power semiconductor device Power semiconductor device

2005-01-11

2005-01-11

Thompson, Craig A. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S707000, C257S723000, C257S777000, C438S109000, C438S931000

Reexamination Certificate

active

06841866

ABSTRACT:
A power semiconductor device includes a portion and an external package enclosing the portion. The portion includes a ceramic board sides provided on the ceramic board defining a space filled with a thermal insulator, and a silicon carbide power semiconductor element enclosed within the thermal insulator. The external package is made of a material having a thermal conductivity lower than that of the side.

REFERENCES:
patent: 3715636 (1973-02-01), Jaffe et al.
patent: 5295044 (1994-03-01), Araki et al.
patent: 6084308 (2000-07-01), Kelkar et al.
patent: 20030205806 (2003-11-01), Chang et al.
patent: 11-510000 (1999-08-01), None
patent: 11-274482 (1999-10-01), None
patent: WO 9701209 (1997-01-01), None

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