Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Patent
1994-03-04
1996-07-23
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
257584, 257771, H01L 2348, H01L 2943
Patent
active
055392440
ABSTRACT:
A first power semiconductor device with a semiconductor base to which an emitter wire electrode is connected through an emitter bonding pad and a gate wire electrode is connected through a gate bonding pad, wherein the gate bonding pad comprises a silicon oxide film, a silicon crystal layer and a gate wiring electrode made of aluminum containing silicon which are successively formed on the semiconductor base, and the gate wire electrode is connected to the gate wiring electrode. A second power semiconductor device wherein the emitter bonding pad is an emitter wiring electrode made of aluminum containing silicon which is directly formed on the semiconductor base, and the emitter wire electrode is bonded to the emitter wiring electrode.
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Mori Mutsuhiro
Onuki Jin
Ozawa Hiroyuki
Yasuda Yasumichi
Hitachi , Ltd.
Jackson, Jr. Jerome
Kelley Nathan K.
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