Power semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond

Reexamination Certificate

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Details

C257SE23020, C257S690000, C257S758000, C257S296000, C361S766000, C361S313000, C174S252000

Reexamination Certificate

active

07368825

ABSTRACT:
The present invention is directed to a power semiconductor device in which a control circuit controls a power switching element, comprising: a semiconductor substrate having a front surface and a back surface; a capacitor disposed on the front surface side of the semiconductor substrate and being comprised of a stacked structure of a first conductive layer, an insulation film and a second conductive layer; and a bonding pad which is disposed on the front surface side to the capacitor and to which a bonding wire being connected, wherein the bonding pad are arranged overlapping the capacitor.

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