Power semiconductor device

Details Power semiconductor device Power semiconductor device

1996-04-19

1998-02-03

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257147, 257149, H01L 2974, H01L 31111

Patent

active

057147752

ABSTRACT:
A p-type emitter layer having a low resistivity is arranged on a bottom surface of an n-type base layer having a high resistivity. A p-type base layer is formed in a top surface of the n-type base layer. Trenches are formed in the p-type base layer and the n-type base layer such that each trench penetrates the p-type base layer and reaches down to a halfway depth in the n-type base layer. Inter-trench regions made of semiconductor are defined between the trenches. An n-type emitter layer having a low resistivity is formed in a surface of the p-type base layer to be in contact with the upper part of each trench. A gate electrode is buried via a gate insulating film in each trench. That side surface of each inter-trench region which faces the gate electrode consists of a {100} plane.

REFERENCES:
patent: 4752818 (1988-06-01), Kushida et al.
patent: 5171696 (1992-12-01), Hagino
patent: 5329142 (1994-07-01), Kitagawa et al.

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