Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device
Reexamination Certificate
2011-03-22
2011-03-22
Sandvik, Benjamin P (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
C257S197000, C257S323000, C257S282000, C257S378000, C257S315000, C257S401000, C257S307000, C257S112000, C257S477000, C257S116000, C257SE23052, C257SE27079, C257SE29036, C257SE21388, C257SE21391, C327S434000, C327S483000
Reexamination Certificate
active
07910949
ABSTRACT:
A power semiconductor device includes a conductive board and a switching element mounted on the conductive board and electrically connected thereto. The power semiconductor device also includes an integrated circuit mounted on the conductive board at a distance from the switching element and electrically connected thereto. The switching element turns ON/OFF a connection between first and second main electrodes in response to a control signal inputted to a control electrode. The integrated circuit includes a control circuit which controls ON/OFF the switching element and a back side voltage detection element which detects a voltage of the back side of the integrated circuit.
REFERENCES:
patent: 6218709 (2001-04-01), Yasuda
patent: 6242890 (2001-06-01), Sudo et al.
patent: 6291880 (2001-09-01), Ogawa et al.
patent: 6414855 (2002-07-01), Yasuda
patent: 6787881 (2004-09-01), Letor et al.
patent: 2003/0042575 (2003-03-01), Takahashi et al.
patent: 2003/0180997 (2003-09-01), Nakayama et al.
patent: 2005/0104153 (2005-05-01), Yasuda
patent: 2007/0200138 (2007-08-01), Ozeki et al.
patent: 2008/0048630 (2008-02-01), Imanaka
patent: 2008/0099838 (2008-05-01), Nishimura
patent: 11-233712 (1999-08-01), None
patent: 2000-183341 (2000-06-01), None
patent: 2004-96318 (2004-03-01), None
patent: 2005-150321 (2005-06-01), None
Goudo Shinsuke
Kawamoto Atsunobu
Yasuda Yukio
Khan Farid
Mitsubishi Electric Corporation
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Sandvik Benjamin P
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