Power semiconductor device

Details Power semiconductor device Power semiconductor device

1985-01-08

1986-08-19

James, Andrew J.

357 68, 357 52, 357 49, 357 54, 357 36, 357 34, H01L 2974

Patent

active

046072730

ABSTRACT:
A semiconductor device having a semiconductor region of a high impurity concentration which is exposed to one major surface of a semiconductor pellet and has a plurality of split areas, and one main electrode on the major surface which makes low ohmic contact with the semiconductor region and has a bonding pad area for lead connection, comprises the high impurity concentration region underlying the entirety of the main electrode inclusive of the bonding pad, and an insulating film interposed between the bonding pad and the semiconductor region. In a gate turn-off thyristor with a short-circuiting P base region, the semiconductor region constitutes an N emitter region and an area thereof underlying the insulating film prevents the cathode/gate short and current concentration by lateral resistance upon turning off the device by the gate bias. In a bipolar transistor, the semiconductor region constitutes an emitter.

REFERENCES:
patent: 2981877 (1961-04-01), Noyce
patent: 3453503 (1969-07-01), Schulz et al.
patent: 3609460 (1971-09-01), Ollendorf et al.
patent: 3878553 (1975-04-01), Sirles et al.
patent: 3964090 (1976-06-01), Jakob
patent: 4092703 (1978-05-01), Sueoka et al.
patent: 4298879 (1981-11-01), Hirano

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