Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1996-04-08
1997-12-30
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257341, 257401, H01L 2974, H01L 2976, H01L 2994
Patent
active
057033838
ABSTRACT:
A power semiconductor device comprises a plurality of IGBT's, and gate electrodes and source electrodes are alternately arranged. In two adjacent IGBT's, the gate electrode is positioned between two source electrodes, and in the next two adjacent IGBT's, the source electrode is positioned between two gate electrodes. The power semiconductor device is designed to meet conditions of 60 .mu.m.ltoreq.L.sub.G, 5.ltoreq.L.sub.G /L.sub.S, and 1.ltoreq.L.sub.G.sup.2 /(D.sub.B .multidot.W.sub.B).ltoreq.9, where L.sub.G denotes the width of the gate electrode, D.sub.B denotes the depth of the base layer of the first conductivity type, W.sub.B denotes the thickness of that portion of the base layer of the second conductivity type which is sandwiched between the base layer of the first conductivity type and the emitter layer of the first conductivity type, and L.sub.S denotes the distance between these gate electrodes.
REFERENCES:
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4837606 (1989-06-01), Goodman et al.
patent: 5285094 (1994-02-01), Mori et al.
Fahmy Wael
Kabushiki Kaisha Toshiba
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