Power semiconductor component with trench-type field ring...

Details Power semiconductor component with trench-type field ring... Power semiconductor component with trench-type field ring...

2008-12-22

2010-10-26

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

C257S170000, C257SE29166, C257SE21040, C438S140000, C438S700000

Reexamination Certificate

active

07821028

ABSTRACT:
A power semiconductor component and a method for producing such a component. The component comprises a semiconductor base body having a first doping. A pn junction is formed in the base body by a contact region having a second doping with a first doping profile. A field ring structure has a second doping with a second doping profile. The contact region and the field ring structure are arranged at respectively assigned first and second partial areas of a first surface of the base body. Both extend into the base body, wherein the base body has, for the field ring structure, a trench-type cutout assigned to each respective field ring, the surface of said cutout following the contour of the assigned doping profile.

REFERENCES:
patent: 7030426 (2006-04-01), Neidig
patent: 2005/0263842 (2005-12-01), Matsui et al.
patent: 2006/0170075 (2006-08-01), Takahashi
patent: 2009/0014753 (2009-01-01), Hisamoto et al.
patent: 10 2006 055 151 (2008-05-01), None
patent: 59075658 (1984-04-01), None
patent: WO 02/25740 (2002-03-01), None

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