Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-05-30
1997-09-16
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257104, 257147, 257341, H01L 2974, H01L 31111, H01L 2976
Patent
active
056683855
ABSTRACT:
A power semiconductor component is specified which provides for a significant reduction in the thickness of the semiconductor substrate (1) whilst at the same time optimizing the switching losses. A transparent emitter (6) and a stop layer (7) are arranged to provide a thin semiconductor and optimized switching losses. The means can be used both in semiconductor switches such as IGBT, MCT or GTO and in diodes.
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Bauer Friedhelm
Lilja Klas
Asea Brown Boveri AG
Loke Steven H.
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