Power semiconductor component with switch-off facility

Details Power semiconductor component with switch-off facility Power semiconductor component with switch-off facility

1989-04-07

1990-10-30

Hille, Rolf

357 38, 357 43, H01L 2910, H01L 2978, H01L 2974, H01L 2702

Patent

active

049672444

ABSTRACT:
In a power semiconductor component with switch-off facility in which the switch-off capability is achieved by MCT unit cells, IGBT unit cells which are connected in parallel with the MCT unit cells are provided for switching on.
This structure ensures an improved switch-on capability and an increased flexibility in designing the component.

REFERENCES:
patent: 4402003 (1983-08-01), Blanchard
patent: 4443931 (1984-04-01), Baliga et al.
patent: 4466176 (1984-08-01), Temple
patent: 4618872 (1986-10-01), Baliga
patent: 4642666 (1987-02-01), Lidow et al.
patent: 4799095 (1989-01-01), Baliga
patent: 4857983 (1989-08-01), Baliga et al.
Transactions on Electron Devices, vol. ED-33, No. 10, Oct. 1986, V. A. K. Temple: "MOS-Controlled Thyristors-A New Class of Power Devices", pp. 1609-1618.
Transactions on Electron Devices, vol. ED-31, No. 6, Jun. 1984, B. Jayant Baliga, et al.: "The Insulated Gate Transistor: A New Three-Terminal MOS-Controlled Bipolar Power Device", pp. 821-828.

Affiliated with

Also associated with

Rating

Power semiconductor component with switch-off facility does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power semiconductor component with switch-off facility, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor component with switch-off facility will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-278064