Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – By pressure alone
Patent
1994-08-09
1996-04-09
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
By pressure alone
257719, 257747, 257764, H01L 2954, H01L 2318
Patent
active
055064523
ABSTRACT:
A power semiconductor component includes a semiconductor body having anode and cathode sides and a given thermal coefficient of expansion. Contact electrodes are each disposed on a respective one of the anode and cathode sides and are made of a metal having a thermal coefficient of expansion differing from the given thermal coefficient of expansion. At least two contact surfaces are disposed one above the other under pressure, between the semiconductor body and the contact electrodes. At least one of the contact surfaces has a layer formed of an amorphous carbon-metal compound.
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Greenberg Laurence A.
Lerner Herbert L.
Limanek Robert P.
Siemens Aktiengesellschaft
Williams Alexander Oscar
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