Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-04-18
2010-02-23
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S784000, C257S684000
Reexamination Certificate
active
07667326
ABSTRACT:
A power semiconductor component (2) has a semiconductor body with a front face (7) and a rear face (9). The front face (7) has a front-face metallization (8), which provides at least one first contact pad (11). A structured metal seed layer (14) is provided as the front-face metallization (8), is arranged directly on the semiconductor body, and has a thickness d, where 1 nm≦d≦0.5 μm.
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Jiguet, et al., “Conductive SU8 Photoresist for Microfabrication”, IN: Advanced Functional Materials, vol. 15, Issue 9, pp. 1511-1516, Abstract, Jul. 2005.
Hoeglauer Josef
Otremba Ralf
Schloegel Xaver
Banner & Witcoff , Ltd.
Infineon - Technologies AG
Pham Long
Rao Steven H
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