Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With means to increase breakdown voltage
Reexamination Certificate
2006-04-18
2006-04-18
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With means to increase breakdown voltage
C257S502000
Reexamination Certificate
active
07030426
ABSTRACT:
In a power semiconductor component produced in a planar technique, a near-surface structure having at least one depression is formed in a surface region of an edge termination adjacent a main surface of the semiconductor body. The structure lies inside a space charge region formed when a voltage is applied at a junction between semiconductor regions of opposite conduction type. Dielectric material may fill the depression and form a passivation layer on the surface region. The depression may be an annular trench having a width to depth ratio ≦1. Alternatively, the structure may be waffle-shaped with multiple depressions.
REFERENCES:
patent: 4137123 (1979-01-01), Bailey et al.
patent: 4468686 (1984-08-01), Rosenthal
patent: 4680615 (1987-07-01), Gotzenbrucker et al.
patent: 4927772 (1990-05-01), Arthur et al.
patent: 5605852 (1997-02-01), Bencuya
patent: 5714396 (1998-02-01), Robb et al.
patent: 6147297 (2000-11-01), Wettling et al.
patent: 6455911 (2002-09-01), Stephani et al.
patent: 6583487 (2003-06-01), Roy
patent: 6607972 (2003-08-01), Schulze et al.
patent: 2003/0119332 (2003-06-01), Kuebelbeck et al.
patent: 34 22 051 (1985-12-01), None
patent: 3832709 (1990-03-01), None
patent: 195 22 539 (1997-01-01), None
patent: 195 31 369 (1997-02-01), None
patent: 199 33 985 (2001-02-01), None
patent: 199 42 679 (2001-04-01), None
patent: 199 62 136 (2001-06-01), None
patent: 100 51 909 (2002-05-01), None
patent: 0361 318 (1989-09-01), None
“A New Juncton Termination Method Employing Shallow Trenches Filled With Oxide”, IEEE Electron Device Letters, vol. 25, No. 1, Jan. 2004.
Heslin Rothenberg Farley & & Mesiti P.C.
Ho Tu-Tu
IXYS Semiconductor GmbH
LandOfFree
Power semiconductor component in the planar technique does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power semiconductor component in the planar technique, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor component in the planar technique will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3563162