Power semiconductor component having a topmost metallization...

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame

Reexamination Certificate

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Details

C257S341000, C257S672000, C438S123000

Reexamination Certificate

active

08039931

ABSTRACT:
A power semiconductor component and a method for the production of a power semiconductor component are disclosed. According to one embodiment of the invention, a topmost metallization region that is provided is formed in a manner extended laterally and outside contacts formed, in such a way that, as a result, a protection and sealing material region to be provided is formed, whilst avoiding electrically insulating additional protection and sealing layers that are usually to be provided.

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