Power semiconductor component and process for its manufacture

Details Power semiconductor component and process for its manufacture Power semiconductor component and process for its manufacture

1984-03-22

1986-06-24

James, Andrew J.

357 38, 357 55, H01L 2980, H01L 2974, H01L 2906

Patent

active

045969990

ABSTRACT:
A power semiconductor component having a component of this type is presented which has at least three consecutive layers and possessing a high current capacity and small power losses. For contacting the first two layers, the component has first and second metallized contact planes, which impress a step-like structure onto a first surface of the component. The steps have a height of between 10 and 20 .mu.m and a width of between 20 and 300 .mu.m. The ratio between the surface area of the first contact plane and the surface area of the second contact plane is between 1 and 4. The first layer is heavily doped and has a maximum thickness of 8 .mu.m, and the second layer is lightly doped and has a maximum thickness of 40 .mu.m. The invention further includes a process for manufacturing the component, wherein the surface structure according to the invention is produced essentially by a reactive ion-etching process with a single aluminum mask.

REFERENCES:
patent: 3609476 (1971-09-01), Storm
patent: 4243999 (1981-01-01), Azuma et al.

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