Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2007-08-15
2010-10-05
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257SE21704
Reexamination Certificate
active
07808070
ABSTRACT:
A power semiconductor component is disclosed. One embodiment provides a semiconductor body, in which at least two vertical power semiconductor components are arranged. Each of the vertical power semiconductor components has a first load terminal arranged at a front side of the semiconductor body. Each of the vertical power semiconductor components has a second load terminal arranged at a rear side of the semiconductor body opposite the front side.
REFERENCES:
patent: 2004/0248330 (2004-12-01), Kitabatake et al.
patent: 2006/0202264 (2006-09-01), Bhalla et al.
patent: 2006/0220061 (2006-10-01), Shimoida et al.
patent: 2006/0256487 (2006-11-01), Kishimoto et al.
Dicke Billig & Czaja, PLLC
Ha Nathan W
Infineon - Technologies AG
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