Power semiconductor component

Details Power semiconductor component Power semiconductor component

1987-09-08

1989-08-29

James, Andrew J.

357 36, 357 56, 357 65, 357 68, 357 51, H01L 2974

Patent

active

048622397

ABSTRACT:
In a power semiconductor component having a so-called "recessed-gate" structure on the cathode side, the large-area control structure consisting of cathode fingers (1) and a lower-lying gate level (2) is divided into a plurality of small-area control zones (25a, 25b) which in each case by themselves are soldered to a cathode block (13a, 13b). This creates high-power components without the possibility of excessive thermal stresses occurring during load cycles.

REFERENCES:
patent: 4127863 (1978-11-01), Kurata
patent: 4246596 (1981-01-01), Iwasaki
patent: 4626888 (1986-12-01), Nagano et al.

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