Power semiconductor component

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257171, 257181, H01L 2974

Patent

active

060547278

ABSTRACT:
A power semiconductor component includes a semiconductor body having a beed peripheral surface, a cathode electrode and an anode electrode. A materially joined connection between at least the anode electrode and the semiconductor body is not produced by alloying. The anode electrode has a diameter being greater than the cathode electrode and smaller than the semiconductor body.

REFERENCES:
patent: 3586932 (1971-06-01), Kokosa
patent: 3654529 (1972-04-01), Lord
patent: 3681667 (1972-08-01), Kokosa
patent: 4080620 (1978-03-01), Chu
patent: 4810672 (1989-03-01), Schwarzbauer
Patent Abstract of Japan No. JP 50-74824 (Naoto), Jul. 26, 1993.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Power semiconductor component does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power semiconductor component, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor component will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-995200

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.