Power semiconductor apparatus

Details Power semiconductor apparatus Power semiconductor apparatus

1989-06-14

1992-07-07

Williams, Howard L.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

361101, 361103, 307310, 307574, 358 42, H02H 720, H01L 2878

Patent

active

051288230

ABSTRACT:
A power MOS transistor and a current sensing MOS transistor have a common drain electrode connected to a load. The gates of these MOS transistors are commonly controlled in response to an input control signal. A load current sensing resistor element is connected between the source electrodes of these transistors. A voltage signal sensed by the load sensing resistor element is amplified by a differential amplifier constituted by a pair of depletion type MOS transistors. The amplified output controls the MOS transistors, and the MOS transistors variably control a voltage of the input control signal to be supplied to the power and current sensing MOS transistors. The power MOS transistor, the current sensing MOS transistor, the depletion MOS transistor, the current control MOS transistor, and the like have the same conductivity type.

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patent: 3887863 (1975-06-01), Brokaw
patent: 4553048 (1985-11-01), Bynum et al.
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patent: 4835649 (1989-05-01), Salerno
patent: 4879584 (1989-11-01), Takagi et al.
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patent: 4994871 (1991-02-01), Chang et al.
Nikkei Electronics 1979, 9.17, pp. 179-194.

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