Power savings technique in solid state integrated circuits

Details Power savings technique in solid state integrated circuits Power savings technique in solid state integrated circuits

1996-11-04

1999-10-26

Lam, Tuan T.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327541, 365227, H03K 190948

Patent

active

059735520

ABSTRACT:
A power saving circuit for metal oxide silicon field effect transistors (MOSFETS) comprised of an MOS circuit comprising low threshold voltage MOSFETs, at least one MOS FET switch connected in series between the low threshold MOSFET and a power rail, at least one MOSFET switch being of low threshold voltage type similar to MOSFETS used in the MOS circuit, and apparatus for applying at least one control signal to the at least one MOSFET switch for enabling the at least one MOSFET switch to turn on and off, the at least one control signal having a voltage of at least one of VPP and VBB, wherein VPP is more positive than a normal power rail operating voltage VDD, and VBB is more negative than a normal opposite power rail operating voltage VSS.

REFERENCES:
patent: 5245230 (1993-09-01), Ohri et al.
patent: 5486774 (1996-01-01), Douseki et al.
patent: 5614847 (1997-03-01), Kawahara et al.

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