Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2001-09-07
2003-11-25
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S692000
Reexamination Certificate
active
06653726
ABSTRACT:
FIELD
The subject matter herein relates to distribution of electrical power across an integrated circuit chip through a power grid layer.
BACKGROUND
An integrated circuit (IC) chip typically includes one or two primary layers of electrical conductors (e.g. aluminum, copper and other conductors), a.k.a. a “power redistribution bus” or power distribution grid, that provide gross distribution of electrical power across the IC chip. The power distribution grid typically transmits the electrical power through other layers of electrical conductors that distribute the electrical power more finely to the various electronic components (e.g. transistors, capacitors, etc.) in the various other layers of the IC chip.
Examples of such power distribution grids
100
,
102
and
104
, specifically for wire bonded IC's, are shown in
FIGS. 1
,
2
and
3
, respectively. The power distribution grid
100
(
FIG. 1
) is similar to the grids
10
and
20
shown in prior art
FIGS. 1 and 2
in U.S. Pat. No. 6,111,310. The power distribution grid
100
includes four main electrical conductors
106
arranged to form a square that generally corresponds to an outer perimeter of an IC (not shown) on which the power distribution grid
100
may be formed. The power distribution grid
100
also includes two sets of evenly spaced electrical conductors
108
and
110
, one vertical set (electrical conductors
108
) and one horizontal set (electrical conductors
110
), that connect the main electrical conductors
106
on opposite sides of the outer perimeter of the IC. The electrical conductors
108
and
110
are generally perpendicular to each other and have a generally constant width. Additionally, the electrical conductors
108
are typically formed within a different layer of the IC than are the electrical conductors
110
, so the electrical conductors
108
and
110
cannot intersect and cause an electrical short. Also, the electrical conductors
108
and
110
typically supply the electrical power to the IC, and another set of electrical conductors (not shown) disposed in the same two layers of the IC chip as the power electrical conductors
108
and
110
typically supplies the ground.
Since the electrical conductors
108
and
110
have a generally constant width, in order to deliver approximately the same current to each region of the IC chip, the current density must be considerably greater in the portion of the electrical conductors
108
and
110
near the periphery of the IC chip than in the center of the IC chip. The greater current density can result in electromigration if the cross-section of the electrical conductors
108
and
110
is too small near the periphery of the IC chip.
The power distribution grid
102
shown in
FIG. 2
is similar to the power distribution grid
100
(
FIG. 1
) and to the grid
30
shown in
FIG. 3
in U.S. Pat. No. 6,111,310. Similar to the power distribution grid
100
, the power distribution grid
102
includes four main electrical conductors
112
arranged to form a square that generally corresponds to an outer perimeter of an IC (not shown) on which the power distribution grid
102
may be formed. The power distribution grid
100
also includes two sets of non-intersecting electrical conductors
114
and
116
that connect the main electrical conductors
112
on opposite sides of the outer perimeter of the IC chip. The electrical conductors
114
and
116
are generally perpendicular to each other. However, unlike the power distribution grid
100
shown in
FIG. 1
, the electrical conductors
114
and
116
have a varying width, instead of a constant width. In this manner, the problem with electromigration that may be experienced in the power distribution grid
100
is reduced in the power distribution grid
102
. Additionally, the power distribution grid
102
exhibits less voltage drop than does the power distribution grid
100
, so the power is more evenly distributed across the power distribution grid
102
than across the power distribution grid
100
. The power distribution grid
102
is typically made from conductor material, such as aluminum, that can be formed in relatively wide lines.
The power distribution grid
104
shown in
FIG. 3
is similar to the power distribution grid
102
(FIG.
2
), except that the four main electrical conductors
118
(arranged to form a square that generally corresponds to an outer perimeter of an IC) and the two sets of non-intersecting variable-width conductors
120
and
122
are formed from multiple individual generally-constant-width electrical conductors
124
. Having multiple individual electrical conductors
124
allows the power distribution grid
104
to be formed from conductor material, such as copper, that cannot readily be formed in relatively wide lines. Some of the individual electrical conductors
124
extend all the way across the IC chip (not shown), while the others extend only part way from the periphery of the IC chip toward the center of the IC chip. In this manner, the problem with electromigration that may be experienced in the power distribution grid
100
(
FIG. 1
) is reduced in the power distribution grid
104
, because there are more of the individual electrical conductors
124
to transfer the current near the periphery of the IC chip where there is more current in the power distribution grid
104
than near the center of the IC chip.
The power distribution grids
100
(FIG.
1
),
102
(
FIG. 2
) and
104
(
FIG. 3
) require exclusive use of at least two layers of the IC chip, which takes up valuable space within the IC chip and limits the vertical thickness of at least one of these two layers (increasing the layer's resistance), since a layer that is overlaid by another layer is inherently restricted in its vertical thickness due to physical limitations of chip fabrication processes. On the other hand, if the power distribution grids
100
,
102
and
104
were made with only one set of electrical conductors (e.g.
108
,
114
and
120
) in only one layer of the IC chip, then the power distribution grids
100
,
102
and
104
would receive current on only two sides of the IC chip, e.g. the top and bottom sides, which requires a relatively tight arrangement of power pins (not shown) on only two sides of the IC chip and results in an unsymmetrical voltage drop from a given point on the IC chip to the nearest main electrical conductor
106
(FIG.
1
),
112
(
FIG. 2
) or
118
(
FIG. 3
) on the periphery of the IC chip.
It is with respect to these and other background considerations that the subject matter herein has evolved.
SUMMARY
The subject matter herein involves a power distribution grid that is formed in only one layer of an IC chip (e.g. the top layer), includes power pins on all four sides of the IC chip and results in a symmetrical voltage drop and current density in both the horizontal and vertical directions across the IC chip for a relatively even power distribution. The IC chip is generally divided into quadrants, each including one corner (top-left, top-right, bottom-right or bottom-left) of the IC chip and about half of the two side edges (top, bottom, left side and right side) that form the corner. Electrical conductors for each quadrant of the power distribution grid are routed from the side edge on one side of the corner of the IC chip to the side edge on the other side of the corner. Generally, the electrical conductors do not intersect each other, so the electrical conductors can be formed in the same layer of the IC chip.
In a particular embodiment, the electrical conductors of each quadrant are routed in general L-shapes from one IC chip side edge of the quadrant to the other IC chip side edge of the quadrant on the other side of the corner of the IC chip, without intersecting each other. The L-shaped electrical conductor nearest the corner of the IC chip in the quadrant is the shortest electrical conductor in the quadrant, and the L-shaped electrical conductor nearest the center of the IC chip is the longest electrical conductor in the quadrant. Additi
Schultz Richard T.
Weir Roger D.
Farahani Dana
Ley LLC John R.
LSI Logic Corporation
Pham Long
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