Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device
Reexamination Certificate
2011-04-26
2011-04-26
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Tunneling pn junction device
Reexamination Certificate
active
07932536
ABSTRACT:
In one embodiment the present invention includes a semiconductor rectifier device comprising a first, second, and third semiconductor regions and a gate. The first semiconductor region is of a first conductivity type. The second semiconductor region is adjacent to the first semiconductor region which has a second conductivity type. The third semiconductor region is adjacent to the second semiconductor region which has the second conductivity type. The gate is proximate to but insulated from the second semiconductor region and electrically coupled to the third semiconductor region. When the first semiconductor region is biased in a first direction, an inversion region forms in the second semiconductor region. The inversion region forms a forward-biased tunnel diode junction with the third semiconductor region. When the first semiconductor region is biased a second direction, the semiconductor rectifier device functions as a reverse-biased PIN diode.
REFERENCES:
patent: 4682405 (1987-07-01), Blanchard et al.
patent: 4767722 (1988-08-01), Blanchard et al.
patent: 4798810 (1989-01-01), Blanchard et al.
patent: 4824795 (1989-04-01), Blanchard et al.
patent: 4827324 (1989-05-01), Blanchard et al.
patent: 4835586 (1989-05-01), Cogan et al.
patent: 4845051 (1989-07-01), Cogan et al.
patent: 5034785 (1991-07-01), Blanchard et al.
patent: 5164325 (1992-11-01), Cogan et al.
patent: 7186609 (2007-03-01), Korec et al.
patent: 7250343 (2007-07-01), Kotek et al.
patent: 2004/0253789 (2004-12-01), Haase
patent: 2005/0151221 (2005-07-01), Ohtani
patent: 2005/0170587 (2005-08-01), Izumisawa et al.
patent: 2005/0272262 (2005-12-01), Kim
patent: 2007/0194374 (2007-08-01), Bhalla et al.
patent: 2007/0210401 (2007-09-01), Sanfilippo et al.
patent: 2008/0035989 (2008-02-01), Jaw et al.
patent: 2008/0087896 (2008-04-01), Chiola
patent: 2008/0138953 (2008-06-01), Challa et al.
patent: 2008/0197407 (2008-08-01), Challa et al.
patent: 2008/0199997 (2008-08-01), Grebs et al.
patent: 2009/0166731 (2009-07-01), Maruoka
patent: 2009/0305475 (2009-12-01), Hshieh
patent: 2010/0013009 (2010-01-01), Pan
patent: 2010/0258866 (2010-10-01), Pan
Eastman Timothy S.
Hamerski Roman Jan
Moult Jonathan
Diodes Incorporated
Fountainhead Law Group P.C.
Nguyen Dao H
Nguyen Tram H
Walsh Chad R
LandOfFree
Power rectifiers and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power rectifiers and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power rectifiers and method of making same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2632634