Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2011-01-18
2011-01-18
Arroyo, Teresa M (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S786000, C257S678000, C257S738000, C257SE23079
Reexamination Certificate
active
07872346
ABSTRACT:
An IC package includes an IC die mounted on a substrate that includes an ESD protection structure formed within the substrate to dissipate any charge accumulation associated with the package's no-connect pins resulting from human body model ESD and/or voltage spikes during package testing. For some embodiments, the ESD protection structure includes a resistive element formed in the substrate between the no-connect pin and a power plane. For other embodiments, the ESD protection structure includes a conductive ring formed in the substrate and laterally surrounding the land pad of the no-connect pin.
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Kunz, Hans, et al., “HBM Stress of No-Connect IC Pins and Subsequent Arc-Over Events that Lead to Human-Metal-Discharge-Like Events into Unstressed Neighbor Pins”, Texas Instruments, Inc., EOS/ESD Symposium 06-24, 1A.4-1-1A.4-8 pages.
Chee Soon Shin
O'Rourke Eugene
Arroyo Teresa M
King John J.
Paradice III William L.
Xilinx , Inc.
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