Power output stage with limited current absorption during high-i

Details Power output stage with limited current absorption during high-i Power output stage with limited current absorption during high-i

1994-04-29

1997-05-20

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Current driver

327584, 327111, 327112, 327421, 327423, 327483, 327365, 326 82, H05B 4114, H03K 17687

Patent

active

056315880

ABSTRACT:
A power stage of quasi-complementary symmetry, including a common-source FET and a common-drain FET, with a reduced absorption of current under the conditions of high impedance of the output. The driving node of the upper (common-drain) transistor from is decoupled from the output node of the stage, preventing the current generator Id, which discharges the control node, from absorbing current from the load connected to the output stage, during a phase of high output impedance. This is preferably realized by using a field effect transistor which has its gate connected to the output node of the stage, and is connected to provide the current drawn from the discharge generator of the driving node of the upper common-drain transistor, absorbing it from the supply node VDD instead of absorbing it from the voltage overdriven node Vb. This alternative solution avoids excessive loading of the high-voltage supply, and is particularly useful when the overdriven node Vb drives multiple output stages.

REFERENCES:
patent: 5068571 (1991-11-01), Schoofs
patent: 5204562 (1993-04-01), Pace
patent: 5376832 (1994-12-01), Gariboldi et al.

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