Power-on reset circuit for resetting semiconductor integrated ci

Details Power-on reset circuit for resetting semiconductor integrated ci Power-on reset circuit for resetting semiconductor integrated ci

1996-02-29

1998-09-22

Calahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Particular stable state circuit

327143, 327546, H03K 1722, G05F 110, G05F 302

Patent

active

058120017

ABSTRACT:
First and second inverter circuits each include a P channel and an N channel MOS transistor whose current paths are connected in series between a power-supply and ground. An input terminal of the second inverter circuit is connected to an output terminal of the first inverter circuit. A first capacitor is connected between the output terminal of the second inverter circuit and the power supply. A second capacitor is connected between the output terminal of the first inverter circuit and ground. A third capacitor is connected between the output terminal of the second inverter circuit and the input terminal of the first inverter. A fourth capacitor is connected between the input terminal of the first inverter circuit and ground. When an output voltage of the first inverter circuit is in a low level state at time of the rise of the power supply and a charging voltage of the third capacitor reaches a threshold voltage of the P channel MOS transistor of the first inverter circuit, an output voltage of the first inverter circuit is set to a high level to charge the second capacitor. When an output voltage of the second inverter circuit rises in accordance with the power-supply voltage, and a charging voltage of the second capacitor reaches a threshold voltage of the N channel MOS transistor of the second inverter circuit, the output voltage of the second inverter circuit is set to a low level.

REFERENCES:
patent: 5017803 (1991-05-01), Yoshida
patent: 5151614 (1992-09-01), Yamazaki et al.
patent: 5469402 (1995-11-01), Yamauchi et al.
patent: 5565811 (1996-10-01), Park et al.

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