Power MOSFET with ultra-deep base and reduced on resistance

Details Power MOSFET with ultra-deep base and reduced on resistance Power MOSFET with ultra-deep base and reduced on resistance

2005-01-25

2005-01-25

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

Reexamination Certificate

active

06846706

ABSTRACT:
A MOS-gated semiconductor device is shown and described which includes deep implanted junctions and thick oxide spacers disposed over a substantial portion of common conduction regions.

REFERENCES:
patent: 5981998 (1999-11-01), Frisina et al.
patent: 5985721 (1999-11-01), Frisina et al.
patent: 6008520 (1999-12-01), Darwish et al.
patent: 6380569 (2002-04-01), Chang et al.
patent: 6468866 (2002-10-01), Frisina et al.

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