Power MOSFET with overcurrent and over-temperature protection an

Details Power MOSFET with overcurrent and over-temperature protection an Power MOSFET with overcurrent and over-temperature protection an

1994-08-30

1996-08-27

Gaffin, Jeffrey A.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Circuit interruption by thermal sensing

361 54, 361100, 257355, H02H 504

Patent

active

055507018

ABSTRACT:
An NPN transistor is added to the chip of a power integrated circuit which contains a power MOSFET and a control circuit in a common chip. The NPN transistor is coupled between the P well containing the integrated circuit components and the N type substrate of the chip and is turned on in response to the forward biasing of the body diode Of the power MOSFET. A depletion mode control MOSFET transistor is coupled, through a fault latch circuit, to the power MOSFET gate and is in series with a capacitor. The node between the power MOSFET gate and capacitor is decoupled from the N type substrate when the bipolar transistor turns on, to turn off the power MOSFET.

REFERENCES:
patent: 4875131 (1989-10-01), Leipold et al.
patent: 5008725 (1991-04-01), Lidon et al.

Affiliated with

Also associated with

Rating

Power MOSFET with overcurrent and over-temperature protection an does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power MOSFET with overcurrent and over-temperature protection an, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power MOSFET with overcurrent and over-temperature protection an will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1060123