Electricity: electrical systems and devices – Safety and protection of systems and devices – Circuit interruption by thermal sensing
Patent
1993-09-14
1996-03-05
Wong, Peter S.
Electricity: electrical systems and devices
Safety and protection of systems and devices
Circuit interruption by thermal sensing
327405, 327429, 361 18, 361 91, H02H 308
Patent
active
054972850
ABSTRACT:
A power integrated circuit is pin-compatible with a three-terminal power MOSFET and contains integrated circuits to turn off the device in the event of an overcurrent or an over-temperature condition. Control power voltage V.sub.cc is applied through a first MOSFET connected between the gate pin and the gate electrode of the power device. A second control MOSFET is connected across the power device gate and source electrodes. The first control MOSFET is turned off and the second control MOSFET is turned on in response to a fault condition. The turn off of the first MOSFET limits the current sinked by the gate pin. A novel boot strap circuit is disclosed which permits the use of all N channel MOSFETs with an N channel power device, and a novel trimmable temperature shutdown circuit is provided. An integrated bipolar transistor is also integrated into the chip to prevent conduction of the P well/N epi diode formed in the device substrate.
REFERENCES:
patent: 5398148 (1995-03-01), Perkins et al.
Elecktronik, vol. 31, No. 1, Jan. 1982, p. 71, Reinhold Oesterhaus, "Ansteuerung Von Leistungs-Feldeffekt-transistoren u/ ber Optokoppler" figure.
International Rectifier Corporation
Krishnan Aditya
Wong Peter S.
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