Power MOSFET with an anode region

Details Power MOSFET with an anode region Power MOSFET with an anode region

1980-03-25

1982-12-14

Rosenberger, R. A.

357 37, H01L 2900

Patent

active

043640737

ABSTRACT:
A vertical MOSFET device having source, body and drain regions, includes an anode region in series with the drain region. The source, body and drain regions have a first forward current gain and the anode, drain and body regions have a second forward current gain, such that the sum of the current gains is less than unity. The anode region provides minority carrier injection into the drain region, enhancing device performance in power applications.

REFERENCES:
patent: 3210563 (1965-10-01), New
patent: 3324359 (1967-06-01), Gentry
patent: 3900771 (1975-08-01), Krause
patent: 4199774 (1980-04-01), Plummer

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