Power MOSFET transistor circuit with active clamp

Details Power MOSFET transistor circuit with active clamp Power MOSFET transistor circuit with active clamp

1990-11-06

1992-01-07

Jackson, Jr., Jerome

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 234, 357 13, 361101, H01L 2978, H02J 902

Patent

active

050796089

ABSTRACT:
A power MOS transistor, including source, drain, and gate electrodes, comprises a substrate of a semiconductor material of one conductivity type having first and second opposed surfaces; a drain region extending through the substrate between the surfaces; a plurality of spaced body regions of the opposite conductivity type extending into the substrate from the first surface; and a source region of the one conductivity type extending into the substrate from the first surface within each of the body regions, the interface of each of the source regions with its respective body region at the first surface being spaced from the interface of its respective body region and the drain region at the first surface to form a channel region therebetween. A gate electrode overlies and is insulated from the first surface and extends across the channel regions. A conductive electrode extends over and is insulated from the gate electrode, and contacts at least a portion of the source regions. A current limiting circuit is coupled between the conductive electrode and the gate electrode and a voltage limiting circuit is coupled between the drain electrode and the gate electrode.

REFERENCES:
patent: 4631564 (1986-12-01), Neilson et al.
patent: 4633283 (1986-12-01), Avery
patent: 4831424 (1989-05-01), Yoshida et al.
patent: 4896199 (1990-01-01), Tsuzuki et al.

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