Power MOSFET including internal power supply circuitry

Details Power MOSFET including internal power supply circuitry Power MOSFET including internal power supply circuitry

1998-03-11

2000-07-11

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Current driver

327434, 327581, 327374, H03K 100

Patent

active

060878622

ABSTRACT:
An N-channel power MOSFET includes a storage capacitor and a pair of diodes connected between the gate and drain terminals, respectively, and the capacitor. Since at any given time the voltage at either the drain or the gate of the MOSFET is high, a charge is maintained on the storage capacitor as the MOSFET is switched on and off. The charge stored on the capacitor yields an output voltage which may be used to power a gate drive circuit or other components within or outside the MOSFET.

REFERENCES:
patent: 4649302 (1987-03-01), Damiano et al.
patent: 4737667 (1988-04-01), Tihanyi
patent: 4811156 (1989-03-01), Kroll
patent: 4992683 (1991-02-01), Robin, Jr.
patent: 5126651 (1992-06-01), Gauen
patent: 5726594 (1998-03-01), Williams
"Precharged Capacitor Ensures High-Side Start-Up", Christophe Basso, European Synchrotron Radiation Facility, Grenoble, France, EDN Aug. 17, 1995, ( PCT 230) 2119 EDC--Electrical Design New 40(1995) Aug. 17, No. 17, Newton, MA US.

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