Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1992-11-24
1996-04-09
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257330, 257341, 257339, 257342, 257496, 257626, H01L 310312
Patent
active
055064213
ABSTRACT:
The power metal oxide semiconductor field effect transistor (MOSFET) has a drain region, a channel region, and a source region formed of silicon carbide. The drain region has a substrate of silicon carbide of a first conductivity type and a drain-drift region of silicon carbide adjacent the substrate having the same conductivity type. The channel region is adjacent the drain-drift region and has the opposite conductivity type from the drain-drift region. The source region is adjacent the channel region and has the same conductivity type as the drain-drift region. The MOSFET also has a gate region having a gate electrode formed on a first portion of the source region, a first portion of the channel region, and a first portion of the drain region. A source electrode is formed on a second portion of the source region and a second portion of the channel region. Also, a drain electrode is formed on a second portion of the drain region.
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Cree Research Inc.
Guay John
Jackson Jerome
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