Power MOSFET

Details Power MOSFET Power MOSFET

1996-02-22

1998-09-01

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327437, 327427, 327389, H03K 17687

Patent

active

058015728

ABSTRACT:
A power MOSFET includes common source and drain terminals and a selection circuit. The sources and drains of a plurality of insulated gate field-effect transistors are respectively connected in parallel to the common source and drain terminals. The selection circuit selectively connects the gates of the insulated gate field-effect transistors to a gate terminal common to a source.

REFERENCES:
patent: 5422588 (1995-06-01), Wynne
H. Namiki et al., "Effect of Gate Resistance on the Efficiency of the MOSFET Synchronous Rectifier" Denshi Joho Tsushin Gakkai Shuki Taikai, V. 1991, B-532, pp. 3-251.
N. Murakami et al., "Circuit Design Consideration of MOSFET Synchronized Rectifier", Denshi Joho Tsushin Gakkai Syunki Zenkodu Taikai, V. 1989, B-956, pp. 3-356.
"Power MOSFET ", NEC Data Book, V. 1994, pp. 982-983.

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